Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer
نویسندگان
چکیده
منابع مشابه
Selectively-undercut traveling-wave electroabsorption modulators incorporating a p-InGaAs contact layer.
A novel fabrication process has been developed for fabricating undercut-etched electroabsorption modulators that are compatible with tunable lasers. This process allows for the incorporation of highly doped p-type InGaAs above the upper cladding as an ohmic contact layer. The EAM demonstrates significant improvement in the microwave performance with little effect on modulation efficiency due to...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2008
ISSN: 1094-4087
DOI: 10.1364/oe.16.020388